BC849CLT1
TRANS NPN 30V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC849CLT1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 100mA. With a transition frequency of 100MHz and a maximum power dissipation of 300mW, it is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment. The device offers a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage. The Vce(sat) is specified at a maximum of 600mV for a base current of 5mA driving a 100mA collector current. Packaged in a SOT-23-3 (TO-236) surface-mount configuration and supplied on tape and reel, the BC849CLT1 operates across a temperature range of -55°C to 150°C. Collector cutoff current (ICBO) is a maximum of 15nA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 300 mW |
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