BC849BMTF
TRANS NPN 30V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC849BMTF is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce) of 30V and a continuous collector current (Ic) capability of 100mA. With a transition frequency (fT) of 300MHz and a maximum power dissipation of 310mW, it offers robust performance for its class. The DC current gain (hFE) is a minimum of 200 at 2mA collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 600mV at 5mA base current and 100mA collector current, with a low collector cutoff current (Icbo) of 15nA. Packaged in a SOT-23-3 surface-mount configuration and supplied on tape and reel, the BC849BMTF is suitable for compact electronic designs across various industries including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 310 mW |
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