BC849BLT1

TRANS NPN 30V 0.1A SOT23-3

Manufacturer: onsemi

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onsemi BC849BLT1 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 100mA. The device exhibits a transition frequency of 100MHz and a maximum power dissipation of 300mW. It is supplied in a SOT-23-3 (TO-236) surface-mount package, facilitating high-density circuit board assembly. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 600mV at 5mA base current and 100mA collector current. The BC849BLT1 is commonly utilized in consumer electronics, industrial control systems, and communication infrastructure. Its operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Transistor Type	NPN
Operating Temperature	-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Frequency - Transition	100MHz
Supplier Device Package	SOT-23-3 (TO-236)
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	30 V
Power - Max	300 mW