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BC848BWT1

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BC848BWT1

TRANS NPN 30V 0.1A SC70-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC848BWT1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 100mA. With a transition frequency of 100MHz and a maximum power dissipation of 150mW, it is suitable for operation within a temperature range of -55°C to 150°C. The device is provided in a compact SC-70-3 (SOT323) surface-mount package, supplied on tape and reel for automated assembly. Key electrical characteristics include a low collector cutoff current of 15nA (ICBO) and a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. The maximum collector-emitter saturation voltage is specified at 600mV when biased with 5mA base current and 100mA collector current. This transistor finds application in consumer electronics, industrial control, and communication systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageSC-70-3 (SOT323)
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max150 mW

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