BC847CTT1G
TRANS NPN GP 45V 100MA SC75-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC847CTT1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This surface mount device, housed in an SC-75 (SOT-416) package, features a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. With a transition frequency of 100MHz and a power dissipation of 200mW, it offers a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage. The Vce(sat) is specified at 600mV at 5mA base current and 100mA collector current. Operating across a temperature range of -55°C to 150°C, this component is commonly utilized in consumer electronics, industrial control systems, and telecommunications infrastructure. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75, SOT-416 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 200 mW |