BC847CTT1
TRANS NPN 45V 0.1A SC75 SOT416Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC847CTT1, an NPN bipolar junction transistor, offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 100mA. This device features a transition frequency of 100MHz and a maximum power dissipation of 225mW. It is supplied in a compact SC-75, SOT-416 surface-mount package, delivered on tape and reel. The BC847CTT1 exhibits a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage, with a Vce(sat) of 600mV at 5mA base current and 100mA collector current. Typical applications include general-purpose amplification and switching in consumer electronics and industrial control systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75, SOT-416 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 225 mW |
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