BC847BLT1
TRANS NPN 45V 100MA SOT23Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC847BLT1 is a general-purpose NPN bipolar junction transistor designed for surface mounting. This component features a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vce) of 45 V. With a transition frequency (fT) of 100 MHz, it is suitable for a variety of amplification and switching applications. The device offers a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, and a maximum Vce (sat) of 600 mV at 5 mA collector current. The BC847BLT1 is housed in a compact SOT-23-3 (TO-236) package, with a maximum power dissipation of 300 mW. It operates across a temperature range of -55°C to 150°C. This transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 300 mW |
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