BC847AWT1
TRANSISTOR NPN 45V 100MA SOT-323Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC847AWT1 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage of 45V and a continuous collector current of 100mA, this device offers a transition frequency of 100MHz. The BC847AWT1 is housed in an SC-70-3 (SOT-323) surface-mount package, enabling efficient integration into compact printed circuit boards. Its power dissipation is rated at 225mW, with a saturation voltage (Vce(sat)) of 250mV at 10mA collector current and 500µA base current. The minimum DC current gain (hFE) is 110 at 2mA collector current and 5V collector-emitter voltage. This component is suitable for use in consumer electronics, industrial control, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-70-3 (SOT323) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 225 mW |
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