BC846BMTF
TRANS NPN 65V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC846BMTF is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 65V collector-emitter breakdown voltage and a continuous collector current capability of 100mA, with a maximum power dissipation of 310mW. The BC846BMTF offers a transition frequency of 300MHz, making it suitable for moderate-frequency circuits. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage, and a Vce(sat) of 600mV at 5mA base current and 100mA collector current. The transistor is supplied in a SOT-23-3 surface-mount package, commonly used across industrial, consumer electronics, and telecommunications sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 310 mW |
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