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BC808-40LT1

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BC808-40LT1

TRANS PNP 25V 0.5A SOT23-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi BC808-40LT1 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a maximum collector emitter breakdown voltage (Vce) of 25 V and a continuous collector current (Ic) capability of 500 mA. The transistor exhibits a minimum DC current gain (hFE) of 250 at 100 mA and 1 V, with a transition frequency (fT) of 100 MHz. Power dissipation is rated at 300 mW. The device is housed in a SOT-23-3 (TO-236) package, supplied on tape and reel. Key parameters include a collector cutoff current (ICBO) of 100 nA and a Vce(sat) of 700 mV at 50 mA, 500 mA. Operating temperature ranges from -55°C to 150°C. This component finds application in general-purpose switching and amplification circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA, 1V
Frequency - Transition100MHz
Supplier Device PackageSOT-23-3 (TO-236)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max300 mW

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