BC807-25LT1
TRANS PNP 45V 500MA SOT23Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC807-25LT1 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage (Vce) of 45V and a maximum continuous collector current (Ic) of 500mA. The device offers a transition frequency (fT) of 100MHz and a maximum power dissipation of 300mW. Key parameters include a minimum DC current gain (hFE) of 160 at 100mA and 1V, and a collector-emitter saturation voltage (Vce(sat)) of 700mV at 50mA and 500mA. Collector cutoff current (ICBO) is specified at a maximum of 100nA. Packaged in a SOT-23-3 (TO-236) surface mount package, this transistor is suitable for use in general-purpose switching and amplification circuits within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 300 mW |
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