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BC640ZL1G

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BC640ZL1G

TRANS PNP 80V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC640ZL1G is a PNP bipolar transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. Its transition frequency is rated at 150MHz, and it dissipates a maximum power of 625mW. The device exhibits a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA base current and 500mA collector current. The BC640ZL1G is packaged in a TO-92 (TO-226) configuration with formed leads, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C and is supplied in Tape & Box (TB) packaging. This transistor is commonly utilized in consumer electronics, industrial controls, and automotive systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition150MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max625 mW

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