BC640TF
TRANS PNP 80V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC640TF is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a maximum power dissipation of 1W and an operating junction temperature of up to 150°C, it is suitable for robust designs. The transistor exhibits a transition frequency of 100MHz and a minimum DC current gain (hFE) of 40 at 150mA and 2V. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV at 50mA collector current and 50mA base current. Packaged in a TO-92-3 (TO-226AA) through-hole format and supplied on tape and reel, the BC640TF is commonly utilized in industrial control, consumer electronics, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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