BC640TAR
TRANS PNP 80V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC640TAR is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage (Vce(max)) of 80 V and a continuous collector current (Ic) capability of 1 A. With a transition frequency (fT) of 100 MHz, it is suitable for moderate frequency circuits. The device offers a minimum DC current gain (hFE) of 40 at 150 mA and 2 V. The saturation voltage (Vce(sat)) is specified at a maximum of 500 mV for 50 mA base current and 500 mA collector current. The BC640TAR has a maximum power dissipation of 1 W and is supplied in a TO-92-3 package for through-hole mounting. It is available in Tape & Box packaging. This device finds application in areas such as consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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