BC640G
TRANS PNP 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC640G is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. With a power dissipation rating of 625mW and a transition frequency of 150MHz, it offers robust performance for demanding electronic designs. The DC current gain (hFE) is a minimum of 40 at 150mA and 2V. The transistor exhibits a Vce saturation of 500mV at 50mA and 500mA. The BC640G is housed in a standard TO-92 (TO-226) through-hole package, suitable for mounting on printed circuit boards. Its operating temperature range spans from -55°C to 150°C. This device is commonly found in industrial and consumer electronics for linear amplification and switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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