BC639ZL1
TRANS NPN 80V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC639ZL1 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A, making it suitable for moderate power handling. Its transition frequency of 200MHz enables operation in RF circuits. The device offers a minimum DC current gain (hFE) of 40 at 150mA and 2V. It is presented in a TO-92 (TO-226) through-hole package, supplied in Tape & Box (TB) packaging. The maximum power dissipation is 625mW. Applications include consumer electronics, industrial controls, and telecommunications infrastructure. The saturation voltage (Vce(sat)) is specified at 500mV maximum at 50mA base current and 500mA collector current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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