BC639RL1G
TRANS NPN 80V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC639RL1G is a bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This NPN transistor features a collector-emitter breakdown voltage (Vceo) of 80 V and a continuous collector current (Ic) capability of 1 A. With a transition frequency (fT) of 200 MHz, it is suitable for moderate-frequency operations. The device offers a minimum DC current gain (hFE) of 40 at 150 mA collector current and 2 V collector-emitter voltage. Maximum power dissipation is rated at 625 mW. The BC639RL1G is supplied in a TO-92 (TO-226) through-hole package, presented on tape and reel. Typical applications include power switching, linear amplification, and general electronic circuits across various industrial segments. Collector cutoff current (Icbo) is a maximum of 100 nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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