BC639RL1
TRANS NPN 80V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's BC639RL1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A, with a maximum power dissipation of 625mW. The transition frequency is specified at 200MHz, and it exhibits a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce Sat) is 500mV maximum at 50mA base current and 500mA collector current. Packaged in a TO-92 (TO-226) through-hole configuration, this device is supplied on a tape and reel. Its electrical characteristics make it suitable for use in consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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