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BC639G

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BC639G

TRANS NPN 80V 1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC639G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, packaged in a TO-92 (TO-226) configuration, offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a transition frequency of 200MHz and a maximum power dissipation of 625mW, it is suitable for use across a wide operating temperature range of -55°C to 150°C. Key parameters include a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a Vce saturation of 500mV at 50mA and 500mA. The BC639G finds application in various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max625 mW

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