BC639-16ZL1
TRANS NPN 80V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC639-16ZL1 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, packaged in a TO-92 (TO-226) case, offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 1A. With a transition frequency of 200MHz and a maximum power dissipation of 625mW, it is suitable for use in consumer electronics, industrial controls, and telecommunications equipment. Key electrical specifications include a minimum DC current gain (hFE) of 100 at 150mA and 2V, and a Vce(sat) of 500mV at 50mA and 500mA. The device operates within a temperature range of -55°C to 150°C. The BC639-16ZL1 is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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