BC638ZL1G
TRANS PNP 60V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC638ZL1G is a PNP bipolar junction transistor (BJT) featuring a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 500mA (Ic). This through-hole component, packaged in a TO-92 (TO-226) form factor, offers a transition frequency of 150MHz and a maximum power dissipation of 625mW. Key specifications include a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a collector cutoff current (ICBO) of 100nA. The saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA base current and 500mA collector current. The device operates across a temperature range of -55°C to 150°C. This transistor is suitable for applications in general purpose amplification and switching circuits within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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