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BC637RL1G

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BC637RL1G

TRANS NPN 60V 1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC637RL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. With a transition frequency of 200MHz, it is suitable for moderate-speed operations. The device offers a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage. Power dissipation is rated at 625mW. The BC637RL1G is housed in a TO-92 (TO-226) package, utilizing through-hole mounting. Typical applications include consumer electronics, industrial control systems, and power management circuits. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max625 mW

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