BC637G
TRANS NPN 60V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC637G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. With a transition frequency of 200MHz and a maximum power dissipation of 625mW, the BC637G is suitable for use in a variety of electronic systems. The TO-92 (TO-226) through-hole package facilitates easy integration into printed circuit boards. Typical applications include consumer electronics, industrial control, and power management circuits. The device exhibits a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage. Collector cutoff current (ICBO) is specified at a maximum of 100nA.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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