BC636
TRANS PNP 45V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC636 is a versatile PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector current rating of 1A and a collector-emitter breakdown voltage of 45V. With a transition frequency of 100MHz and a maximum power dissipation of 1W, it is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment. The device offers a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage. The BC636 is supplied in a TO-92-3 through-hole package, allowing for straightforward PCB mounting. Key parameters include a maximum collector cutoff current (ICBO) of 100nA and a Vce(sat) of 500mV at 500mA collector current. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1 W |
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