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BC635ZL1G

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BC635ZL1G

TRANS NPN 45V 1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC635ZL1G is an NPN bipolar junction transistor. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current handling capability of 1A. With a transition frequency of 200MHz and a maximum power dissipation of 625mW, it is suitable for various applications. The DC current gain (hFE) is a minimum of 40 at 150mA and 2V. The saturation voltage (Vce Sat) is specified at a maximum of 500mV for a base current of 50mA and collector current of 500mA. The device exhibits a collector cutoff current (ICBO) of 100nA maximum. The BC635ZL1G is supplied in a TO-92 (TO-226) through-hole package, presented in Tape & Box (TB) packaging. This transistor finds application in general-purpose amplification and switching circuits across industrial and consumer electronics sectors. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max625 mW

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