BC635ZL1
TRANS NPN 45V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC635ZL1 NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 45V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a transition frequency of 200MHz and a maximum power dissipation of 625mW, it offers a robust solution for various electronic systems. The BC635ZL1 is housed in a standard TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. Key electrical parameters include a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a Vce saturation of 500mV at 50mA and 500mA. Its operating temperature range is from -55°C to 150°C, making it reliable across diverse environmental conditions. This component is commonly utilized in consumer electronics, industrial control, and automotive applications. Packaging is supplied in Tape & Box (TB).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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