BC635
TRANS NPN 45V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC635, an NPN bipolar junction transistor, offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 1A. This device features a transition frequency of 100MHz and a maximum power dissipation of 1W. The minimum DC current gain (hFE) is specified at 40 at 150mA and 2V. Collector cutoff current (ICBO) is rated at a maximum of 100nA. The saturation voltage (Vce Sat) at 500mA collector current and 50mA base current is a maximum of 500mV. Packaged in a TO-92-3 (TO-226-3) through-hole configuration, the BC635 operates over a junction temperature range of -55°C to 150°C. It is commonly utilized in general-purpose amplification and switching applications across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1 W |
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