BC618G
TRANS NPN DARL 55V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Darlington Bipolar Junction Transistor (BJT), part number BC618G. This device offers a collector-emitter breakdown voltage of 55V and a continuous collector current capability of 1A. Featuring a high DC current gain (hFE) of 10000 minimum at 200mA and 5V, and a transition frequency of 150MHz, it is suitable for amplification and switching applications. The BC618G has a maximum power dissipation of 625mW and a collector cutoff current of 50nA. It is presented in a TO-92 (TO-226) through-hole package. This component finds application in general-purpose amplification, consumer electronics, and industrial control systems. The saturation voltage (Vce(sat)) is a maximum of 1.1V at 200µA base current and 200mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 200µA, 200mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 200mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 55 V |
| Power - Max | 625 mW |
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