BC559BU
TRANS PNP 30V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC559BU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 30 V and a continuous collector current capability of 100 mA. It exhibits a transition frequency of 150 MHz and a maximum power dissipation of 500 mW. The DC current gain (hFE) is a minimum of 110 at 2 mA collector current and 5 V collector-emitter voltage. The transistor is supplied in a TO-92-3 package, suitable for through-hole mounting. Key parameters include a Vce(sat) of 650 mV at 5 mA base current and 100 mA collector current, and an Icbo of 15 nA at 30 V. This device finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 500 mW |
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