BC558CBU
TRANS PNP 30V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC558CBU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA. With a transition frequency of 150MHz and a power dissipation rating of 500mW, it is suitable for use in various industrial, consumer electronics, and communications equipment. The device offers a minimum DC current gain (hFE) of 420 at 2mA and 5V. Packaged in a TO-92-3 (TO-226-3) through-hole configuration, the BC558CBU is supplied in bulk packaging. Its Vce saturation is specified at a maximum of 650mV at 5mA base current and 100mA collector current, with a collector cutoff current (ICBO) of 15nA. The maximum operating junction temperature is 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 500 mW |
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