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BC558BTAR

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BC558BTAR

TRANS PNP 30V 0.1A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC558BTAR is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current (Ic) of 100mA. With a transition frequency (fT) of 150MHz and a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage, it offers robust performance. The transistor is packaged in a TO-92-3 (TO-226-3) through-hole configuration, supplied in Tape & Box (TB) packaging. Its maximum power dissipation is rated at 500mW, with a Vce saturation of 650mV at 5mA base current and 100mA collector current. The BC558BTAR finds application in various electronic systems including audio amplifiers, switching circuits, and general analog signal processing within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition150MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max500 mW

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