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BC556CTA

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BC556CTA

TRANS PNP 65V 0.1A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BC556CTA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 65V collector-emitter breakdown voltage and a continuous collector current capability of 100mA. With a transition frequency of 150MHz and a maximum power dissipation of 500mW, it is suitable for use in consumer electronics, industrial control systems, and automotive applications. The BC556CTA offers a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage. Its saturation voltage is specified at a maximum of 650mV with 5mA base current and 100mA collector current. The transistor is housed in a TO-92-3 package with formed leads, suitable for through-hole mounting. Current cutoff is a maximum of 15nA (ICBO). This component is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Frequency - Transition150MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)65 V
Power - Max500 mW

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