BC556BZL1G
TRANS PNP 65V 0.1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC556BZL1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 65V collector-emitter breakdown voltage (Vceo) and a continuous collector current (Ic) capability of up to 100mA. With a transition frequency (fT) of 280MHz, it is suitable for moderate frequency circuits. The BC556BZL1G offers a minimum DC current gain (hFE) of 180 at 2mA collector current and 5V collector-emitter voltage. The maximum power dissipation is rated at 625mW. The device is housed in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. Typical operating temperature range is -55°C to 150°C (TJ). This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 5V |
| Frequency - Transition | 280MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 625 mW |
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