BC550BBU
TRANS NPN 45V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC550BBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA, with a power dissipation rating of 500mW. The BC550BBU exhibits a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage, and a transition frequency of 300MHz. It is supplied in a TO-92-3 package suitable for through-hole mounting. Applications include consumer electronics, industrial control systems, and telecommunications infrastructure. The device has a low collector cutoff current of 15nA (ICBO) and a Vce saturation of 600mV at 5mA base current and 100mA collector current. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 500 mW |
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