BC549ATA
TRANS NPN 30V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC549ATA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA. With a transition frequency of 300MHz and a power dissipation of 500mW, it is suitable for use in consumer electronics and industrial control systems. The device operates up to a junction temperature of 150°C and is supplied in a TO-92-3 package, suitable for through-hole mounting. Key electrical specifications include a minimum DC current gain (hFE) of 110 at 2mA, 5V and a Vce saturation of 600mV at 5mA, 100mA. The collector cutoff current (ICBO) is a maximum of 15nA. This component is available in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 500 mW |
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