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BC546BZL1G

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BC546BZL1G

TRANS NPN 65V 0.1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC546BZL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 65 V and a continuous collector current (Ic) capability of 100 mA. It offers a maximum power dissipation of 625 mW and a transition frequency (fT) of 300 MHz. The DC current gain (hFE) is rated at a minimum of 200 at 2 mA collector current and 5 V Vce. The saturation voltage (Vce(sat)) is a maximum of 600 mV at 5 mA base current and 100 mA collector current. Housed in a TO-92 (TO-226) package with formed leads, this device is suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ). This transistor is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment. The BC546BZL1G is supplied in Cut Tape (CT) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition300MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)65 V
Power - Max625 mW

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