BC546BRL1G
TRANS NPN 65V 0.1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC546BRL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92 (TO-226) package, offers a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. Its DC current gain (hFE) is a minimum of 200 at 2mA collector current and 5V collector-emitter voltage, with a transition frequency of 300MHz. The device features a maximum power dissipation of 625mW and operates within a temperature range of -55°C to 150°C (TJ). The BC546BRL1G is supplied in tape and reel packaging, making it suitable for automated assembly processes. Industries utilizing this component include consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 625 mW |
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