BC546BG
TRANS NPN 65V 0.1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC546BG, a bipolar junction transistor (BJT) with an NPN configuration, offers a Collector-Emitter Breakdown Voltage of 65V and a continuous Collector Current (Ic) of 100mA. This general-purpose transistor features a transition frequency of 300MHz and a maximum power dissipation of 625mW at 25°C. The DC current gain (hFE) is specified at a minimum of 200 at 2mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Saturation) is a maximum of 600mV at 5mA base current and 100mA collector current. The device is housed in a TO-92 (TO-226) through-hole package and is suitable for applications in consumer electronics and general switching circuits. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 625 mW |
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