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BC517ZL1G

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BC517ZL1G

TRANS NPN DARL 30V 1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC517ZL1G is a high-gain NPN Darlington bipolar junction transistor. Featuring a 30V collector-emitter breakdown voltage and a maximum collector current of 1A, this device is suitable for applications requiring significant current amplification. The minimum DC current gain (hFE) is rated at 30000 at 20mA and 2V. With a transition frequency of 200MHz and a power dissipation of 625mW, it offers robust performance. The BC517ZL1G is housed in a TO-92 (TO-226) package with through-hole mounting, and is supplied on tape and box. This component finds application in various industrial control systems and power switching circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100µA, 100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30000 @ 20mA, 2V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max625 mW

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