BC517G
TRANS NPN DARL 30V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC517G is an NPN Darlington bipolar junction transistor designed for high gain applications. This component offers a collector current (Ic) of up to 1A and a collector-emitter breakdown voltage (Vce) of 30V. Featuring a significant DC current gain (hFE) of 30000 minimum at 20mA and 2V, the BC517G is suitable for switching and amplification circuits. Its transition frequency is rated at 200MHz, and it dissipates a maximum power of 625mW. The device is available in a TO-92 (TO-226) package, suitable for through-hole mounting. It operates within an ambient temperature range of -55°C to 150°C. This transistor finds application in various industrial and consumer electronics, including power supply regulation, motor control, and general-purpose amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 20mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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