BC517
TRANS NPN DARL 30V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC517, a high-gain NPN Darlington bipolar transistor, offers a 30V collector-emitter breakdown voltage and a maximum collector current of 1A. This device features a typical DC current gain (hFE) of 30000 at 20mA, 2V and a transition frequency of 200MHz. With a maximum power dissipation of 625mW, the BC517 is suitable for applications requiring significant current amplification. The transistor is housed in a standard TO-92 (TO-226) package, facilitating through-hole mounting. Its saturation voltage (Vce) is specified at 1V maximum for a base current of 100µA and collector current of 100mA. The operating temperature range is -55°C to 150°C. This component finds use in various industrial applications, including power switching and amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 20mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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