BC489G
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC489G, an NPN bipolar junction transistor (BJT), offers robust performance with a maximum collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. This through-hole component, packaged in a TO-92 (TO-226) configuration, features a transition frequency of 200MHz and dissipates a maximum power of 625mW. Key electrical parameters include a minimum DC current gain (hFE) of 60 at 100mA and 2V, and a collector cutoff current (ICBO) of 100nA. The saturation voltage (Vce Saturation) is specified at a maximum of 300mV for 100mA base current and 1A collector current. Operating across a wide temperature range of -55°C to 150°C, the BC489G is suitable for applications in consumer electronics, industrial control, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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