BC487G
TRANS NPN 60V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC487G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component operates with a collector-emitter breakdown voltage of 60V and a continuous collector current of up to 500mA. It features a transition frequency of 200MHz and a maximum power dissipation of 625mW. The device exhibits a minimum DC current gain (hFE) of 60 at 100mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 300mV for 100mA collector current and 1A base current. The BC487G is housed in a TO-92 (TO-226) through-hole package, suitable for a wide operating temperature range of -55°C to 150°C. This transistor finds application in various electronic circuits within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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