BC447G
TRANS NPN 80V 0.3A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC447G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 300 mA and a collector-emitter breakdown voltage (Vce) of 80 V. With a transition frequency (fT) of 200 MHz, it is suitable for moderate frequency operations. The device exhibits a minimum DC current gain (hFE) of 50 at 2 mA and 5 V. Its saturation voltage (Vce(sat)) is a maximum of 250 mV at 10 mA base current and 100 mA collector current. The BC447G is packaged in a TO-92 (TO-226) through-hole mount format, with a maximum power dissipation of 625 mW. It operates across an extended temperature range of -55°C to 150°C. This transistor is commonly found in consumer electronics, industrial control systems, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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