BC373RL1G
TRANS NPN DARL 80V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC373RL1G is an NPN Darlington bipolar junction transistor (BJT) designed for through-hole mounting. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. It features a high DC current gain (hFE) of 10000 minimum at 100mA collector current and 5V Vce. The transition frequency is 200MHz, and the maximum power dissipation is 625mW. The transistor is housed in a TO-92 (TO-226) package, supplied on tape and reel. The saturation voltage (Vce(sat)) is a maximum of 1.1V at 250µA base current and 250mA collector current. The BC373RL1G is suitable for applications in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 250µA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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