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BC372G

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BC372G

TRANS NPN DARL 100V 1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC372G is an NPN bipolar junction transistor featuring a Darlington configuration. This device offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 1A. With a DC current gain (hFE) of a minimum 10000 at 100mA and 5V, it excels in applications requiring high amplification. The transition frequency is rated at 200MHz, and it dissipates a maximum power of 625mW. The BC372G is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. Typical applications include power switching, motor control, and general-purpose amplification in industrial and consumer electronics. The device operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.1V @ 250µA, 250mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max625 mW

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