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BC372

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BC372

TRANS NPN DARL 100V 1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC372 is an NPN Darlington bipolar junction transistor designed for through-hole mounting in a TO-92 (TO-226) package. This component offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 1 A. It features a high DC current gain (hFE) of 10000 minimum at 100 mA and 5 V, with a transition frequency of 200 MHz. The maximum power dissipation is 625 mW, and the device operates within an ambient temperature range of -55°C to 150°C. Saturation voltage (Vce Sat) is specified as 1.1 V maximum at 250 µA base current and 250 mA collector current. Applications for this device are found in general-purpose amplification and switching circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.1V @ 250µA, 250mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max625 mW

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