BC33840BU
TRANS NPN 25V 0.8A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC33840BU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage of 25V and a continuous collector current rating of 800mA, this device is suitable for moderate power handling. The transition frequency is specified at 100MHz, indicating its capability for use in RF circuits and higher-frequency signal processing. With a maximum power dissipation of 625mW, the BC33840BU is housed in a TO-92-3 (TO-226-3) through-hole package, facilitating straightforward board mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 250 at 100mA and 1V, and a collector cutoff current of 100nA. The saturation voltage (Vce Sat) is 700mV at 50mA/500mA. This component finds application in consumer electronics, industrial control systems, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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