BC337-16ZL1G
TRANS NPN 45V 0.8A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC337-16ZL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 800mA. With a transition frequency of 210MHz and a power dissipation rating of 625mW, it is suitable for use in consumer electronics, industrial control systems, and automotive applications. The DC current gain (hFE) is a minimum of 100 at 100mA collector current and 1V collector-emitter voltage. The Vce(sat) is specified at a maximum of 700mV for a base current of 50mA and a collector current of 500mA. Packaged in a TO-92 (TO-226) through-hole configuration, the BC337-16ZL1G operates within a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 210MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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