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BC337-16RL1G

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BC337-16RL1G

TRANS NPN 45V 0.8A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BC337-16RL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter voltage (Vce) breakdown of 45V and a continuous collector current (Ic) capability of up to 800mA. With a DC current gain (hFE) of a minimum of 100 at 100mA and 1V, and a transition frequency (fT) of 210MHz, it offers robust performance for demanding circuit designs. The device dissipates a maximum power of 625mW and is housed in a TO-92 (TO-226) package suitable for through-hole mounting. Key parameters include a Vce(sat) of 700mV at 50mA/500mA and a collector cutoff current (Ic(off)) of 100nA. Operating temperature range is from -55°C to 150°C. This transistor is commonly utilized in consumer electronics, industrial control, and communication systems. The BC337-16RL1G is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition210MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max625 mW

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